Telecom 50V GaN Products
-Driver stage 10-130W Class AB reference design ,final or driver stage 40-1200W Doherty reference design for all key cellular bands
-1.8-2.2G Full band 2 stages 50V LDMOS+GaN hybrid enhanced 650W Doherty example, No need for any costly 28V LDMOS MMIC !
-Low trapping effect process and DPD friendly Doherty designs support typical IBW 100-400MHz, see 5G NR Signal DPD Examples
-Low cost series 50V GaN particularly offers comparable cost with equivalent LDMOS , mainly for low band of 4G/5G

